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Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]

Identifieur interne : 00BE36 ( Main/Repository ); précédent : 00BE35; suivant : 00BE37

Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]

Auteurs : RBID : Pascal:03-0465355

Descripteurs français

Pascal (Inist)
- 9910C, 7220J, 7280E, Etude expérimentale, Indium composé, Gallium arséniure, Effet Auger, Recombinaison électron trou, Semiconducteur III-V, Passivation, Semiconducteur bande interdite étroite.

English descriptors

KwdEn :
- Auger effect, Electron-hole recombination, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Narrow band gap semiconductors, Passivation.

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Pascal:03-0465355

Le document en format XML

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Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]

Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri